Scientists develop the next generation of highly efficient memory materials with atom-level control.
Like the flutter of a butterfly's wings, sometimes small and minute changes can lead to big and unexpected results and changes in our lives. Recently, a team of researchers at Pohang University of Science and Technology made a very small change to develop a material called"spin-orbit torque ," which is a hot topic in next-generation DRAM memory.
In this study, Professors Daesu Lee and Si-Young Choi from POSTECH addressed the problem by systematically modifying the material's seemingly insignificant structure. Strontium ruthenate , a complex oxide known for exhibiting both magnetism and spin-Hall effects, has been widely used in SOT research. The team synthesized SrRuOwith asymmetric spin-Hall effects on the top and bottom surface layers by minutely adjusting the atomic lattice structure of these layers.
The research was conducted with support from the Samsung Future Technology Incubation Program and the Mid-Career Research Program of the National Research Foundation of Korea.Yongjoo Jo, Younji Kim, Sanghyeon Kim, Eunjo Ryoo, Gahee Noh, Gi-Jeong Han, Ji Hye Lee, Won Joon Cho, Gil-Ho Lee, Si-Young Choi, Daesu Lee.
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