A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers have identified the insertion of 2D metal layers into a bulk semiconductor.
By carefully observing materials through various cutting-edge characterization techniques, the researchers uncovered new insights into the process of semiconductor doping and elastic strain engineering.
A semiconductor acquires p-type or n-type conductivity through a process called doping, which refers to the intentional introduction of specific impurities into a pure semiconductor material to greatly alter its electrical and optical properties. Using state-of-the-art electron microscope imaging, the scientists observed the spontaneous formation of a superlattice featuring alternating layers of GaN and Mg. This is especially unusual since GaN and Mg are two types of materials with significant differences in their physical properties.
"Using such a simple and low-cost approach, we were able to enhance the transport of holes in GaN, which conducts more current," Wang said."This interesting finding in interactions between a semiconductor and a metal may provide new insights into semiconductor doping and improve the performance of GaN-based devices."Jia Wang, Wentao Cai, Weifang Lu, Shun Lu, Emi Kano, Verdad C.
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