Silicon Carbide (SiC) is a semiconducting compound with unique properties that make it a potential replacement for silicon in various applications. It can be tuned through impurity doping and synthesis of different nanostructures. SiC has different polytypes with varying unit cell structures, which affect its physical and chemical properties.
By Gopika G, Ph.DOct 31 2023Reviewed by Megan Craig, M.Sc. Silicon Carbide has become one of the efficient replacement materials for silicon for various applications due to its unique properties that can be tunable through impurity doping and synthesis of different nanostructures.Semiconductors are a vital part of electronic devices due to their conditional conductivity, which can be controlled through various parameters.
The two polytypes of great interest are the 4H and 6H-SiC, as the 4H and 6H active sites differ with two and three, respectively, for substituting the impurity elements. Its structure imparts many important properties to the SiC, making it suitable for applications requiring superior thermal conductivity, thermal stability, low thermal expansion, low switching losses and high chemical stability 1.
How Are SiC Nanomaterials Synthesized? SiC nanomaterials could be synthesized in different structures of 0D , 1D , 2D and 3D nanostructures . 4H-SiC is the most suitable polytype for applications in power electronics due to its high electron mobility, high critical electric field strength and availability of single-crystal wafers. These electronic properties are low for 6H-SiC and too low for 3C-SiC.
Due to the presence of suitable mechanical and chemical properties, SiC is reported as good candidate for reinforcement materials in different material-matrix composites. Its high surface to volume ratio and sensitivity to change in surface states is utilized for the development of different types of sensors such as gas and stress.
Silicon Carbide Sic Semiconducting Compound Unique Properties Polytypes Unit Cell Structures
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