– Discovery of Unique New Superlattice Unveils New Semiconductor Doping Mechanism

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– Discovery of Unique New Superlattice Unveils New Semiconductor Doping Mechanism
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Thermal treating of metallic magnesium on gallium nitride semiconductors results in the formation of a distinctive superlattice structure. Magnesium, nitrogen, and gallium atoms are shown in orange, blue, and grey, respectively. Credit: Jia Wang

By carefully observing the materials through various cutting-edge characterization techniques, the researchers uncovered new insights into the process of semiconductor doping and elastic strain engineering. They published their findings in the journalin applications demanding higher power density and faster operating frequencies.

Using state-of-the-art electron microscope imaging, the scientists observed the spontaneous formation of a superlattice featuring alternating layers of GaN and Mg. This is especially unusual since GaN and Mg are two types of materials with significant differences in their physical properties.

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